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Formation of Silicon Nanocrystallites by Electron Cyclotron Resonance Chemical Vapor Deposition and Ion Beam Assisted Electron Beam Deposition

Published online by Cambridge University Press:  10 February 2011

Eun Kyu Kim ,
Won Chel Choi ,
Suk-Ki Min  and
Chong-Yun Park
Eun Kyu Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, ekkim@kistmail.kist.re.kr
Won Chel Choi
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, ekkim@kistmail.kist.re.kr Department of Physics, Sung Kyun Kwan University, 300 Chun Chun Dong, Suwon 440-740, Korea
Suk-Ki Min
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea, ekkim@kistmail.kist.re.kr
Chong-Yun Park
Affiliation:
Department of Physics, Sung Kyun Kwan University, 300 Chun Chun Dong, Suwon 440-740, Korea
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Abstract

Nano-crystalline silicon (nc-Si) thin films were directly deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and ion beam assisted electron beam deposition (IBAED) method. In the sample deposited by ECR-CVD, the room temperature photoluminescence originated from the nc-Si and the silicon-hydrogen bond were appeared. It was confirmed that the size of the nc-Si could be controlled up to about 3 nm with the low substrate temperature during the deposition process and then the hydrogen atoms play a very important role in the formation of the nc-Si. The IBAED method was also found to an useful technique for nc-Si formation by the control of ion beam power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 231
Copyright
Copyright © Materials Research Society 1998

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