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Frequency Dependence of Hopping Conductance in Crystalline Electron Irradiated Semiconductors

Published online by Cambridge University Press:  26 February 2011

S.D. Kouimtzi
S.D. Kouimtzi*
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, Reading, U.K. and Third Laboratory of Physics, University of Thessaloniki, Thessaloniki, Greece,
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Abstract

Extensive irradiations were carried on crystalline semiconductors InSb, GaAs and InAs. At low temperatures the frequency dependence of the conductivity is observed to be sublinear (σαωs). where s<1. The dependence of s on both the degree of the induced damage and on temperature is studied and discussed in terms of the quatum mechanical tunnelling and of correlated barrier hopping mechanisms.

At fairly low doses of irradiation activated conductance is observed with s having a weak temperature dependence. As the degree of damage is further increased conduction at helium temperatures takes place by variable range hopping, σαexp(-b/T1/4). The constant b is observed to depend on the effective mass for different semiconductors.

At higher temperatures activated conduction is observed again. The observed activation energies E are Eg 1/4 <E<Eg 1/2 and we believe they could represent hopping of single and double carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 433
Copyright
Copyright © Materials Research Society 1991

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References

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