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A Full p-Type Poly-Si TFT Shift Register for Active Matrix Displays

Published online by Cambridge University Press:  01 February 2011

Myoung-Hoon Jung
Affiliation:
majent@postech.ac.kr, Pohang University of Science and Technology, Pohang, Korea, Republic of
Hoon-Ju Chung
Affiliation:
hjchung@kumoh.ac.kr, Kumoh National Institute of Technology, Gumi, Korea, Republic of
Young-Ju Park
Affiliation:
yjpark@postech.ac.kr, Pohang University of Science and Technology, Pohang, Korea, Republic of
Ohyun Kim
Affiliation:
ohkim@postech.ac.kr, Pohang University of Science and Technology, Pohang, Korea, Republic of
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Abstract

A new shift register using p-type poly-Si thin-film transistors (TFTs) for active matrix display is proposed. It utilizes only p-type TFTs to simplify the fabrication process, and provides time-shifted output signals with a voltage swing from VSS to VDD without signal-level loss. In the proposed shift register, output is structurally separated from carry and therefore has a high immunity to output signal distortion caused by output load capacitance. We also propose a new light emitting control method using this shift register for high image quality active-matrix organic light emitting diode (AMOLED) displays. The proposed shift register was verified by simulation and measurement.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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