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GaN Crystals Grown from a Liquid Phase at Reduced Pressure

Published online by Cambridge University Press:  10 February 2011

V. A. Ivantsov ,
V. A. Sukhoveev  and
V. A. Dmitriev
V. A. Ivantsov
Affiliation:
PhysTech WBG Research Group, Ioffe Institute, 26 Politechnicheskaya Street, St. Petersburg 194021, Russia, iva@shuttle.ioffe.rssi.ru
V. A. Sukhoveev
Affiliation:
PhysTech WBG Research Group, Ioffe Institute, 26 Politechnicheskaya Street, St. Petersburg 194021, Russia, iva@shuttle.ioffe.rssi.ru
V. A. Dmitriev
Affiliation:
PhysTech WBG Research Group, Ioffe Institute, 26 Politechnicheskaya Street, St. Petersburg 194021, Russia, iva@shuttle.ioffe.rssi.ru Material Science Research Center of Excellence, Howard University, 2300 6th Street, Washington, DC 20059, USA, vlad@msrce.howard.edu
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Abstract

Gallium nitride crystals were grown from a Ga-based melt at an ambient gas pressure not exceeding 2 atm. Growth temperature was about 1000°C. The crystals were 2H-GaN and had a (0001) plane orientation. Crystal size varied from 0.05×0.05×0.01 mm3 to 2×2×0.05 mm3. Lateral growth rate of the crystals ranged from 0.05 to 1 mm/hr. Normal growth rate was about 0.01 mm/hr. Depending on growth conditions, the crystals have a platelet or dendrite shape. Crystals were characterized by optical and electron microscopy, Auger electron spectroscopy, x-ray differential diffraction, photoluminescence and optical absorption. Lattice parameters and band gap value of the grown crystals were determined at 300 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 143
Copyright
Copyright © Materials Research Society 1997

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References

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