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GaN: From Selective Area to Epitaxial Lateral Overgrowth

Published online by Cambridge University Press:  15 February 2011

X. Li ,
S. G. Bishop  and
J. J. Coleman
X. Li
Affiliation:
University of Illinois, Urbana, IL 61801
S. G. Bishop
Affiliation:
University of Illinois, Urbana, IL 61801
J. J. Coleman
Affiliation:
University of Illinois, Urbana, IL 61801
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Abstract

The evolution of the topography of GaN stripes as a function of stripe width (2 - 120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.8
Copyright
Copyright © Materials Research Society 1999

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