Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-16T01:12:08.557Z Has data issue: false hasContentIssue false
  • English
  • Français

Gate Oxide Integrity as Affected by Hf Last Wafer Treatments and Passivating Techniques

Published online by Cambridge University Press:  21 February 2011

R.C. Hawthorne ,
R.P.S. Thakur ,
K. Morinville  and
R. Kauffman
R.C. Hawthorne
Affiliation:
Micron Semiconductor, Inc., 2805 East Columbia Road, Boise, ID 83706
R.P.S. Thakur
Affiliation:
Micron Semiconductor, Inc., 2805 East Columbia Road, Boise, ID 83706
K. Morinville
Affiliation:
Micron Semiconductor, Inc., 2805 East Columbia Road, Boise, ID 83706
R. Kauffman
Affiliation:
Micron Semiconductor, Inc., 2805 East Columbia Road, Boise, ID 83706
Get access

Abstract

As device performance requirements increase, device features become smaller and films become thinner. The resultant sensitivity to defect density is such that controlling the condition of wafer surfaces prior to primary process steps becomes more and more critical. Wafer cleaning technologies of the past may not be optimum in providing needed device characteristics and reliability of tomorrow's semiconductors. In this paper, we compare the currently used RCA wafer clean chemistries to newer HF last, vapor dry technologies which use direct displacement of liquids to minimize contaminants. Subsequent passivation of these hydrophobic wafer surfaces is accomplished by various methods of oxidation including chemical treatments and RTP processing. Data collected from I-V, SIMS and DEFECT DENSITY testing will be included in the presentation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 303
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sawicki, E.J., “An Executive Primer for Hazardous Waste Disposal in the Semiconductor Industry”, Microcontamination, Oct. 1992, p. 6.Google Scholar
2. Skidmore, K., “Dry Wafers Cleanly: Without Spinning”, Semiconductor International, Dec. 1989, p. 8.Google Scholar
3. McConnell, C.F., “Examining the Effects of Wafer Surface Chemistry on Particle Removal Using Direct-Displacement Isopropyl Alcohol Drying”, Microcontamination, Sept. 1991, p. 2.Google Scholar
4. Gupta, B., Microcontamination Proceedings, 580, (Oct. 1992).Google Scholar
5. Moslehi, M., Shatas, S., Saraswat, K.C., and Meindl, J., IEEE Trans. Electron Devices, 34 (6), 1407–1410, (1987).Google Scholar