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Ge and Gesl Heteroepitaxy on Si(100) by MBE

Published online by Cambridge University Press:  26 February 2011

D. C. Houghton ,
J.-M. Baribeau ,
P. Maigne ,
T. E. Jackman ,
I. C. Bassignana ,
C. C. Tan  and
R. Holt
D. C. Houghton
Affiliation:
National Research Council of Canada, Ottawa, Ontario
J.-M. Baribeau
Affiliation:
National Research Council of Canada, Ottawa, Ontario
P. Maigne
Affiliation:
National Research Council of Canada, Ottawa, Ontario
T. E. Jackman
Affiliation:
National Research Council of Canada, Ottawa, Ontario
I. C. Bassignana
Affiliation:
Bell Northern Research, Ottawa, Ontario
C. C. Tan
Affiliation:
Bell Northern Research, Ottawa, Ontario
R. Holt
Affiliation:
Energy, Mines and Resources, Ottawa, Ontario, Canada
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Abstract

We have grown a series of Ge and graded Si1-xGex epilayers on (100)Si substrates by MBE under different conditions. The quality of the layers has been characterized by cross-sectional TEM, Rutherford backscattering/ channeling and x-ray diffraction. This work addresses the optimization of growth temperature, (300–700°C) an evaluation of compositional grading, the effect of the incorporation of strained layer superlattice dislocation filters and post growth anneal cycles. Particular attention has been paid to grading GexSi1-x, x = 0 to 1 and the growth morphology of intermediate alloy epilayers.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 411
Copyright
Copyright © Materials Research Society 1987

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References

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