Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T18:13:13.371Z Has data issue: false hasContentIssue false
  • English
  • Français

Ge+ Preamorphization of Si: Effects of Dose and Very Low Temperature Thermal Treatment on Extended Defect Formation During Subsequent Spe

Published online by Cambridge University Press:  26 February 2011

E. Myers ,
G. A. Rozgonyi ,
D. K. Sadana ,
W. Maszara ,
J. J. Wortman  and
J. Narayan
E. Myers
Affiliation:
Materials Engineering Department, North Carolina State University, Raleigh, NC 27695-7916
G. A. Rozgonyi
Affiliation:
Materials Engineering Department, North Carolina State University, Raleigh, NC 27695-7916
D. K. Sadana
Affiliation:
Phillips Research Laboratories, Signetics Corp., Sunnyvale, CA 94086
W. Maszara
Affiliation:
Materials Engineering Department, North Carolina State University, Raleigh, NC 27695-7916
J. J. Wortman
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J. Narayan
Affiliation:
Materials Engineering Department, North Carolina State University, Raleigh, NC 27695-7916
Get access

Abstract

Cross-section transmission electron microscopy (X-TEM) has been used to illustrate the amornhous/ crystalline (a/c) micromorphology dependence of various low dose Ge+ preamorphizatlon implants in Si. Ge+ Implants were done at room _emperature at energies of 150 and 300 keV in the dose range of 1 to 9E14 cm−2. These implants result in the formation of either a buried or a continuous amorphous layer, with rough a/c interfaces. Nucleation of spanning “hairpin” dislocations during subsequent solid phase epltaxy (SPE) regrowth is known to be related to rough a/c interface morphology. Very low temperature anneals (VLTA),less than 500°C where the rate of SPE is minimal, were utilized to sharpen rough a/c interfaces prior to subsequent SPE regrowth. Sharpening of rough a/c interfaces is shown to result from an unexpected reverse crystalline to amorphous phase transition. This reverse phase transition results in the dissolution of detached microcrystallltes located within the amorphous layer near the a/c interface. Utilization of VLTA interfacial smoothing prior to SPE regrowth therfore, results in the reduction of residual spanning “hairpin” dislocations along with homogenization of the amorphous material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 107
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Tsai, M.Y. and Streetman, B.G., J. Appl. Phys, 50, 183(1979)Google Scholar
2) Sadana, D.K., Maszara, W., Wortman, J.J., Rozgonyi, G.A. and Chu, W.K., J. Electrochem. Soc., 131(4), 943(1984)Google Scholar
3) Seidel, T.E.. Knoell, R., Stevie, F.A., Poli, G. and Schwartz, B., in Proc. of the Electrochem. Soc.; VLSI Science and Technology 1984, Bean, K.E. and G.A. Rozgonyi, eds.Google Scholar
4) Sands, T., Washburn, J., Gronsky, R., Maszara, W., Sadana, D.K. and Rozgonyi, G.A., p 531, 1985 Proc. 13th Int'l. Conf. on Defects in Semiconductors, L.C. Kimerling and J.M. Parsey, eds.,Google Scholar
5) Myers, E., Sadana, D.K. and Rozgonyi, G.A., J. Mat. Res., submitted.Google Scholar
6) Maher, D.M., Knoell, R.V., Ellington, M.B., Hull, R., Jacobson, D.C. and Joy, D.C., These Procedings.Google Scholar
7) Csepregi, L., Mayer, J. and Sigmon, T.W., Phys. Lett. 54A(2), 157(1975).Google Scholar