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Giant Magnetoresistance Studies of NiFe-Based Spin-Valve Multilayers

Published online by Cambridge University Press:  15 February 2011

Chien-Li Lin
Affiliation:
The Center for Micromagnetics and Information Technologies (MINT) Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
John M. Sivertsen
Affiliation:
The Center for Micromagnetics and Information Technologies (MINT) Department of Chemical Engineering and Materials Science
Jack H. Judy
Affiliation:
The Center for Micromagnetics and Information Technologies (MINT) Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
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Abstract

The giant magnetoresistance in FeMn exchange-biased NiFe-based multilayer spin-valve structures prepared by rf-diode sputtering technique were studied. Experiments were performed on samples with different thicknesses of each layer in these multilayers. The magnetic properties were measured using a vibrating sample magnetometer and the giant magnetoresistance was measured using an in-line four-point magnetoresistance probe. A magnetoresistance of 6.5% in a magnetic field of less than 15 Oe was obtained in a Cu(30Å)/FeMn(150Å)/NiFe(50Å)/Co(15Å)/ Cu(20Å)/Co(15Å)/NiFe(60Å) multilayer structure at room temperature. Annealing experiments of these multilayers were performed to study the thermal stability during the recording head fabrication processes. No degradation in the magnetoresistance has been found for annealing these films at 230°C up to four hours.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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