Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-05T22:30:17.100Z Has data issue: false hasContentIssue false
  • English
  • Français

Grain Growth and Mobility in Nanocrystalline Ge Films

Published online by Cambridge University Press:  30 August 2012

Siva Konduri ,
Max Noack  and
Vikram Dalal
Siva Konduri
Affiliation:
Dept. of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011
Max Noack
Affiliation:
Microelectronic Research Center, Iowa State University, Ames, IA 50011
Vikram Dalal
Affiliation:
Dept. of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011
Get access

Abstract

In this paper, we report on deposition and properties of nanocrystalline Ge:H films . The films were grown from germane and hydrogen mixtures using Radio frequency Plasma-enhanced chemical vapor deposition (RF-PECVD) process using ∼45 MHz frequency. The crystallinity of the films was measured using Raman measurements and from x-ray diffraction techniques, it was found that the grain size was a strong function of deposition pressure, temperature and hydrogen/germane ratios. High hydrogen ratios and high powers led to films with smaller grains. Higher pressures and smaller hydrogen/germane ratio led to films with larger grain sizes, as did higher growth temperatures. The mobility of electrons and holes was measured using space charge limited current (SCLC) techniques in n+-n-n+ devices. It was found that nominally undoped films were generally n type with carrier concentrations in the 1E14/cm3 range. Mobility was found to increase with grain size, with 60 nm grains showing mobility in the 2-3 cm2/V-s range.

Keywords

Geelectronic materialphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 359 - 364
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Shah, A.V., Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C. and Graf, U, Solar Energy Materials and Solar Cells, Vol. 78, pp. 469–491(2003).CrossRefGoogle Scholar
DalalV, L., Muthukrishnan, K., Xuejun, Niu, Stieler, D., Journal of Non-Crystalline Solids, Vol. 352, pp.892–895 (2006).CrossRefGoogle Scholar
Saripalli, S., Dalal, V., IEEE International Conference on Electro/Information Technology 2008, EIT 2008 pp. 414–418 (2008).Google Scholar
Krause, M., Stiebig, H., Carius, R. and Wagner, H., MRS Proceedings, 664, A26.5.1 (2001).CrossRefGoogle Scholar
Dalal, Vikram, Leib, Jeff, Muthukrisnan, Kamal, Stieler, D., and Noack, Max, IEEE Photovoltaic Specialists Conference 2005. pp.1448–1451 (2005).CrossRefGoogle Scholar
Dalal, V. L., Muthukrishnan, K., Stieler, D., and Noack, M., MRS Proceedings, 862, A21.4 (2005).Google Scholar
Matsui, T, Chang, C. W., Takada, T., Isomura, M., Fujiwara, H., Kondo, M., Solar Energy Materials and Solar Cells, Vol. 93, pp.1100–1102 (2009).CrossRefGoogle Scholar
Lampert, M.A. and Mark, P., New York and London: Academic Press, (1970).Google Scholar