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Grain Growth Behavior of Bismuth Titanate Thin Film on Metallic Silicon Substrates

Published online by Cambridge University Press:  21 February 2011

Yanxia Lu ,
Walter A. Schulze  and
David T. Hoelzer
Yanxia Lu
Affiliation:
NYS College of Ceramics, Alfred University, Alfred, NY 14802
Walter A. Schulze
Affiliation:
NYS College of Ceramics, Alfred University, Alfred, NY 14802
David T. Hoelzer
Affiliation:
NYS College of Ceramics, Alfred University, Alfred, NY 14802
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Abstract

Bismuth titanate (Bi4Ti3O12) thin films were produced from acetate precursors by spin coating deposition followed by crystallization using rapid thermal processing (RTP)‥ Crystallographic orientation was characterized by x-ray diffraction, and indicated that it varied with the number of coating layers for the films deposited on single crystal silicon wafers. Cross sectional samples were prepared and studied by Transmission Electron Microscopy (TEM). The results showed that grains randomly nucleated at the interface where a thin amorphous silica layer was naturally formed. Grains nucleated in the [020] direction or near this direction showed a faster growth rate than that in the other directions, and eventually dominant in determining the grain orientation of the film. Preferential orientation in the [020] direction observed by TEM is identical to the XRD results for the multilayer thin films. The thickness and grain size of thin film were also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 607
Copyright
Copyright © Materials Research Society 1995

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References

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