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Growth Characteristics of Nial Intermetallic Layers on III-V Type Substrate

Published online by Cambridge University Press:  25 February 2011

G.C. Joo ,
T. Tsakalakos  and
S.P. Chen
G.C. Joo
Affiliation:
Dept. of Mat. Sci. and Eng., Rutgers University, Piscataway, NJ 08854
T. Tsakalakos
Affiliation:
Dept. of Mat. Sci. and Eng., Rutgers University, Piscataway, NJ 08854
S.P. Chen
Affiliation:
Theoretical Div., Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

We studied interfacial behavior of coherent NiAl intermetallic layers on compound semiconductor heterostructures qualitatively via computer simulations using the embedded atom method. From the static simulations, a tentative model structure at the interface between the NiAl (CsCl type) and zincblende structure is proposed. The real time epitaxial growth simulations using the molecular dynamics technique show the effects of various parameters on the growth sequence along with other interesting results like surface diffusion and melting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 149
Copyright
Copyright © Materials Research Society 1991

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References

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