Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-17T19:41:44.320Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Published online by Cambridge University Press:  01 February 2011

Govindhan Dhanaraj ,
Yi Chen ,
Hui Chen ,
William M Vetter ,
Hui Zhang  and
Michael Dudley
Yi Chen
Affiliation:
yichen1@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Hui Chen
Affiliation:
huichen@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
William M Vetter
Affiliation:
wvetter@ms.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Hui Zhang
Affiliation:
hui.zhang@sunysb.edu, Stony Brook University, Department of Mechanical Engineering, Stony Brook, NY, 11794-2300, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Get access

Abstract

SiC homo-epitaxial layers were grown in a chemical vapor deposition process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. Growth rates were found to increase as temperatures increased at high carrier gas flow rate, while at lower carrier gas flow rate growth rates were observed to decrease as temperature increased. Based on the equilibrium model, “thermodynamically controlled growth” accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the screw dislocation density as well as the conversion of basal plane dislocations (BPD) into threading edge dislocations (TED).

Keywords

dislocationsdefectschemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-27
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hingorani, N.G. and Stahlkopf, K. E., Scientific American 269, 78 (1993)Google Scholar
2 M. Bhatnagar and Baliga, B. J., IEEE Transactions on Electron Devices 40, 645 (1993)Google Scholar
3 Baliga, B. J., Proceedings of the IEEE 82, 1112 (1994)Google Scholar
4 Kordina, O., Hallin, C., Ellison, A., Bakin, A.S., Ivanov, I.G., Henry, A., Yakimova, R., Touminen, M., Vehanen, A., Janzen, E., Appl. Phys. Lett. 69, 1456 (1996)Google Scholar
5 Fanton, M. A., Skowronski, M., Snyder, D. W., Chung, H. J., Nigam, S., Weiland, B. E. and Huh, S. W., Materials Research Forum 457–460, 87 (2004)Google Scholar
6 Ha, S., Mieszkowski, P., Skowronski, M. and Rowland, L.B.: J. Cryst. Growth 244, 257 (2002)Google Scholar
7 Dhanaraj, G., Dudley, M., Chen, Y., Raghathamachar, B., Wu, B. and Zhang, H., J. Cryst. Growth 287, 344 (2006)Google Scholar
8 Chen, Y., Dhanaraj, G., Chen, H., Vetter, W., M. Dudley and Zhang, H., Mater. Res. Soc. Symp. 891, 0891–EE12 (2005)Google Scholar
9 Dhanaraj, G., Chen, Y., M. Dudley and Zhang, H., Mater. Sci. Forum (in press)Google Scholar
10 Ha, S., Mieszkowski, P., Skowronski, M. and Rowland, L.B.: J. Cryst. Growth 244, 257 (2002)Google Scholar
11 Ohno, T., Yamaguchi, H., Kuroda, S., Kojima, K., Suzuki, T. and Arai, K.: J. Cryst. Growth 260, 209 (2004)Google Scholar
12 Ohno, T., Yamaguchi, H., Kuroda, S., Kojima, K., T.Suzuki and K.Arai: J. Cryst. Growth 271, 1 (2004)Google Scholar
13 Zhang, Z., Shrivastava, A., and Sudarshan, T. S., Materials Science Forum (2005)Google Scholar
14 Dhanaraj, G., Invited presentation at II-VI Inc. (Jan 3, 2005)Google Scholar
15 Klapper, H. and Küppers, H.: Acta Cryst. A 29, 495 (1973)Google Scholar