Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-06-02T18:30:24.016Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of AlBN Solid Solution by OMVPE

Published online by Cambridge University Press:  10 February 2011

M. Shin ,
A. Y. Polyakov ,
W. Qian ,
M. Skowronski ,
D. W. Greve  and
R. G. Wilson
M. Shin
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890
A. Y. Polyakov
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890
W. Qian
Affiliation:
currently with Department of Materials Science & Engineering, Northwestern University, Evanston, IL 60208
M. Skowronski
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890
D. W. Greve
Affiliation:
Department of Electrical & Computer Engineering, Carnegie Mellon University, PA 15213–3890
R. G. Wilson
Affiliation:
Hughes Research Laboratory, Malibu, CA 90265
Get access

Abstract

Layers of AIBN were grown on sapphire by organometallic vapor phase epitaxy (OMVPE) at 1050°C using triethylboron (TEB), trimethylaluminum (TMA) and ammonia as precursors. Boron is readily incorporated into the layers and its concentration in the solid phase can be made fairly high, up to at least 40%. However, single phase AIxB1–xN films can only be grown for compositions not exceeding x=0.01. For higher B concentrations a second B-rich phase is formed. This phase is shown to be most probably wurtzite BN based on the results of transmission electron microscopy and x-ray diffraction. The growth of this phase occurs within the framework of wurtzite AIN islands providing the sites for lateral growth of wurtzite BN. This leads to formation of columnar structure of AIN and BN crystallites oriented in the basal plane and existing side by side. This is one of the first observation of purely thermal growth of sp3 bonded BN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 141
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kioyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys., 35, L74 (1996)Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Appl. Phys. Lett., 68, 2105 (1996)Google Scholar
3. Heying, B., Wu, X.H., Keller, S., Li, Y., Kapolnek, D., Keller, B.P., DenBaars, S.P. and Speck, J.S., Appl. Phys. Lett., 68, 643 (1996)Google Scholar
4. Sakai, S., Ueta, Y. and Terauchi, Y., Jpn. J. Appl. Phys, 32, 4413 (1993)Google Scholar
5. Haruyama, M., Shirai, T., Kawanishi, H. and Suematsu, Y., (BxAlyGal1-x-y)N quaternary system lattice matched to (0001) 6H-SiC substrate, in Proc. Int. Symp. on Blue Lasers and Light Emitting Diodes, Chiba Univ. Japan, March 1996, p. 106 Google Scholar
6. Noreika, A.J. and Francombe, M.H., J. Vac. Sci. Technol., B2, 722 (1969)Google Scholar
7. Nakamura, K., J. Electrochem. Soc., 133, 1120 (1986)Google Scholar
8. Manasevit, H.M., Hewitt, W.B., Nelson, A.J. and Mason, A.R., J. Electrochem. Soc., 136, 3070 (1989)Google Scholar
9. Shin, M., Polyakov, A.Y., Skowronski, M., Greve, D.W., Wilson, R.G., and Freitas, J.A. “Factors influencing the electrical and optical properties of AlGaN layers on sapphire” ‘96 Spring MRS. San Francisco, CA Google Scholar
10. Wilson, R.G., Stevie, F.A. and Magee, C.W., Secondary Ion Mass Spectrometry (Wiley, New York, 1989)Google Scholar
11. Edgar, J.H., in Properties of roup III nitrides, ed. Edgar, J.H. (INSPEC Publications, London, 1994), pp. 7–21 Google Scholar
12. Meng, W.J., in Properties of group III nitrides, ed. Edgar, J.H. (INSPEC Publications, London, 1994), pp. 22–29 Google Scholar
13. Akashi, T., Pak, H.-R., Sawaoka, A.B., J. Mater. Sci., 21, 4060 (1986)Google Scholar
14. Onodera, A., Inoue, K., Yoshihara, H., Nakae, H., Matsuda, T. and Hirai, T., J. Mater. Sci., 25, 4279 (1990)Google Scholar
15. Ueno, M., Hasegawa, K., Oshima, R., Onodera, A., Shimomura, O., Takemura, K., Nakae, H., Matsuda, T. and Hirai, T., Phys. Rev., B18, 10226 (1992)Google Scholar
16. Solozhenko, V.L., in Properties of group III nitrides, ed. Edgar, J.H. (INSPEC Publications, London, 1994), pp. 43–70 Google Scholar
[17] Polyakov, A.Y., Shin, M., Skowronski, M., Greve, D.W., Wilson, R.G., Govorkov, A.V. and Desrosiers, R.M., in the abstracts of Electron Materials Conference, Santa Barbara, June 1996, paper CC9Google Scholar