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The Growth of Silicon Oxide Films by Remote Plasma Enhanced CVD

Published online by Cambridge University Press:  26 February 2011

DV Tsu  and
G Lucovsky
DV Tsu
Affiliation:
Department of Physics, NC State Univ, Raleigh NC 27965–8202
G Lucovsky
Affiliation:
Department of Physics, NC State Univ, Raleigh NC 27965–8202
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Abstract

We have grown films of silicon oxide by remote Plasma Enhanced CVD (remote PECVD). By changing the fraction of O3 in a plasma excited O3/He mixture that is mixed with a fixed flow of SiH4 diluted with Ar, we can deposit films which are either Si-rich, stoichiometric or Si-deficient. These changes are accompanined by differences in the incorporation of bonded hydrogen which occurs in SiH groups in Si-rich films and SiOH groups in Si-deficient films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 595
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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