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Growth of Stoichiometric Bn Films by Pulsed Laser Evaporation

Published online by Cambridge University Press:  28 February 2011

P. T. Murray ,
M. S. Donley  and
N. T. McDevitt
P. T. Murray
Affiliation:
Research Institute, University of Dayton, Dayton, OH 45469
M. S. Donley
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433-6533
N. T. McDevitt
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433-6533
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Abstract

The feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000ºC. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 140: Symposium S – New Materials Approaches to Tribology: Theory and Applications , 1988 , 195
Copyright
Copyright © Materials Research Society 1989

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