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Growth of Thin Nickel Silicide Layers on Clean B-Doped Si(111) Surfaces at Room Temperature

Published online by Cambridge University Press:  28 February 2011

L. Luo ,
G. A. Smith  and
W. M. Gibson
L. Luo
Affiliation:
State University of New York at Albany, Department of Physics, Albany, NY 12222
G. A. Smith
Affiliation:
Also at GE Corporate Research and Development Center, Schenectady, NY 12301
W. M. Gibson
Affiliation:
State University of New York at Albany, Department of Physics, Albany, NY 12222
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Abstract

The initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ~ 3 ML) leads to the growth of NiSi2 which is thought to be a diffusion barrier that terminates further formation of NiSi2 at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 263
Copyright
Copyright © Materials Research Society 1990

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References

References:

1 For example, see Tung, R.T., in Silicon Molecular Beam Epitaxy, edited by Rasper, E. and Bean, J.C., (CRC Press, Boca Raton, FL, 1988) Vol. II, p. 13 and the references therein.Google Scholar
2Luo, L., Smith, G.A., Hashimoto, S., and Gibson, W.M., Nucl. Instr. and Meth. (B), (1990), in press.Google Scholar
3Feldman, L.C., Mayer, J.W., and Picraux, S.T., Material Analysis by Ion Channeling (Academic Press, New York, 1982).Google Scholar
4Luo, L., Smith, G.A., Hashimoto, S., and Gibson, W.M., in Silicon Molecular Beam Epitaxy, edited by Bean, J.C. and Schowalter, L.J., (Electrochemical Society, Inc, NJ, 1988), 88–8, 243.Google Scholar
5Gossmann, H.-J., Feldman, L.C. and Gibson, W.M., Phys. Rev. Lett. 53, 294 (1984).Google Scholar
6Lu, S.W., Nieh, C.W., and Chen, L.J., Appl. Phys. Lett. 49, 1770 (1986).Google Scholar
7Rhoderick, E.H. and William, R.H., Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1988).Google Scholar
8Stensgaard, I., Feldman, L.C., and Silverman, P.J., Surf. Sci. 77, 513 (1978).Google Scholar
9 A SP intensity of 1 atom/row corresponds to 3 ML of Si along the [111] channeling direction.Google Scholar
10Luo, L., Smith, G.A., Hashimoto, S., and Gibson, W.M., Radiation Effects and Defects in Solids, (1989), in press.Google Scholar
11Chu, W.-K., Mayer, J.W., and Nicolet, M.-A., Backscattering Spectrometrv (Academic Press, NY, 1978).Google Scholar
12Luo, L., Sahoo, N., Gibson, W.M. and Das, T.P., Bull. Am. Phys. Soc. 34, 447 (1989)Google Scholar
13 Type A NiSi2 has the same orientation as the substrate whereas type B NiSi2 is rotated 180° with respect to the <111> axis normal to the substrate.+axis+normal+to+the+substrate.>Google Scholar
14Van Loenen, E.J., Frenken, J.W.M. and van der Veen, J.F., Phys. Rev. Lett. 54. 827 (1985).Google Scholar
15Monch, W., Surf. Sci. 86, 672 (1979).Google Scholar
16Tu, K.N., Appl. Phys. Lett. 27, 221 (1975).Google Scholar