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Heat and mass transfer modeling for a better knowledge of the large-area growth of homoepitaxial SiC by CVD

Published online by Cambridge University Press:  21 March 2011

Michel Pons ,
Jerome Mezière ,
Jean Marc Dedulle ,
Stephane Wan Tang Kuan ,
Elisabeth Blanquet ,
Claude Bernard ,
Pierre Ferret ,
Lea Di Cioccio ,
Thierry Billon  and
Roland Madar
Michel Pons
Affiliation:
LTPCM- UMR 5614 (CNRS/INPG/UJF), Domaine Universitaire, B.P.75, F-38402 St. Martin d'Hères Cedex, France
Jerome Mezière
Affiliation:
LTPCM- UMR 5614 (CNRS/INPG/UJF), Domaine Universitaire, B.P.75, F-38402 St. Martin d'Hères Cedex, France
Jean Marc Dedulle
Affiliation:
LMGP - UMR 5628 (CNRS/INPG), Domaine Universitaire, B.P. 46, F-38402 St. Martin d'Hères Cedex, France
Elisabeth Blanquet
Affiliation:
LTPCM- UMR 5614 (CNRS/INPG/UJF), Domaine Universitaire, B.P.75, F-38402 St. Martin d'Hères Cedex, France
Claude Bernard
Affiliation:
LTPCM- UMR 5614 (CNRS/INPG/UJF), Domaine Universitaire, B.P.75, F-38402 St. Martin d'Hères Cedex, France
Pierre Ferret
Affiliation:
LETI-CEA Grenoble, 38054 Grenoble Cedex 9, France
Lea Di Cioccio
Affiliation:
LETI-CEA Grenoble, 38054 Grenoble Cedex 9, France
Thierry Billon
Affiliation:
LETI-CEA Grenoble, 38054 Grenoble Cedex 9, France
Roland Madar
Affiliation:
LMGP - UMR 5628 (CNRS/INPG), Domaine Universitaire, B.P. 46, F-38402 St. Martin d'Hères Cedex, France
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Abstract

The growth of thick epitaxial 4H-SiC layers with low defect density is an essential step for the fabrication of SiC based devices. Cold- and hot wall reactors using silane and propane diluted in hydrogen were used in this study. The typical growth temperature range is 1700–1900 K and total pressure range 10–100 kPa. The resulting epilayers exhibit low background doping, low defect density and good thickness uniformity. The main problem is that it is difficult with this first generation of reactors to ensure a constant temperature over large wafer. A 3D simulation approach of heat and mass transfer was used with three objectives. The first one is to have a visualization of the flow, temperature and gaseous species fields in the standard reactor. The second one is to propose solutions for the optimal control of the temperature field and the subsequent uniformity of the epilayers over large dimensions. The third one is to improve the kinetic databases in this temperature range which has been very little investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.6
Copyright
Copyright © Materials Research Society 2001

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References

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