Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition

Hiromichi Ohta; Hiroaki Tanji; Masahiro Orita; Hideo Hosono; Hiroshi Kawazoe

doi:10.1557/PROC-570-309

Abstract

Heteroepitaxial ZnO films were grown on (111) surface of yttria stabilized zirconia (YSZ) and (0001) surface of sapphire by PLD method, using KrF eximer laser (248nm) in an ultra-high-vacuum chamber. ZnO grown on YSZ (111) at the substrate temperature of 800°C had an epitaxial relationship at the ZnO/YSZ interface of ZnO [1120]//YSZ [110]. Hexagonalshaped grains were observed whose surfaces were atomically flat. The grain size of ZnO increased and the Hall mobility rose toward 1400nm and 75cm2/Vs. respectively as film thickness increased from 10 nm to 800 nm.

Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

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Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

Heteroepitaxial Growth of Zinc Oxide Single Crystal Thin Films on (111) Plane YSZ by Pulsed Laser Deposition

Abstract

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References

REFERENCES

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