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Heteroepitaxial Si-ZrO2-Si by MOCVD

Published online by Cambridge University Press:  15 February 2011

Anton C. Greenwald ,
Nader M. Kalkhoran ,
Fereydoon Namavar ,
Alain E. Kaloyeros  and
Ioannis Stathakos
Anton C. Greenwald
Affiliation:
Spire Corporation, Bedford, MA 01730
Nader M. Kalkhoran
Affiliation:
Spire Corporation, Bedford, MA 01730
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730
Alain E. Kaloyeros
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 22222
Ioannis Stathakos
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 22222
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Abstract

The objective of this research was to demonstrate heteroepitaxial growth of yttria stabilized cubic zirconia on single crystal silicon substrates by chemical vapor deposition (CVD) using metalorganic source materials. We succeeded in depositing extremely smooth, well aligned films of zirconia on silicon substrates, both the <100> and <111> orientations, without an oxide interfacial layer. Experimental variables investigated included varying zirconia source materials, substrate temperatures, oxygen concentration, gas flow rates, yttria doping, substrate orientation, and cobalt-silicide as an oxygen diffusion barrier. ZrO2 films were predominantly tetragonal when deposited in the absence of oxygen while cubic phase material could be put down at 750°C with oxygen background. Films deposited from TMHD zirconium contained no measurable carbon contamination. Deposits from trifluoro-acetylacetonate Zr contained small amounts of fluorine, even in the presence of water vapor, and some carbon when hydrogen was used as a diluent gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 123
Copyright
Copyright © Materials Research Society 1994

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