Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-13T08:46:06.916Z Has data issue: false hasContentIssue false
  • English
  • Français

High Mobility GaN films Produced by ECR-Assisted MBE

Published online by Cambridge University Press:  25 February 2011

R. J. Molnar ,
T. Lei  and
T. D. Moustakas
R. J. Molnar
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, MA 02215
T. Lei
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, MA 02215
T. D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer, and Systems Engineering, Boston University, Boston, MA 02215
Get access

Abstract

High electron mobility autodoped GaN films were produced by the ECR assisted MBE method. The net electron concentration was varied systematically from 2×1019 to 2×1017cm−3 by controlling the active nitrogen overpressure. Correspondingly, the electron mobility increased from 20 to 210 cm2V−1sec−1. The line through the experimental data also predicts the electron mobilities of GaN films produced by the CVD methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 765
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pankove, J.I., Mat. Res. Soc. Symp. Proc, vol.162, 515 (1990).Google Scholar
2. Akasaki, I. and Amano, H., Mat. Res. Soc. Symp. Proc, vol. 242, 383 (1992).Google Scholar
3. Nakamura, S., Mukai, T., and Senoh, M., J. Appl. Phys., 71, 5543 (1992).Google Scholar
4. Moustakas, T.D., Molnar, R.J., Lei, T., Menon, G., and Eddy, C.R. Jr, Mat. Res. Soc. Proc, vol. 242, 427 (1992).Google Scholar
5. Moustakas, T.D., Lei, T., and Molnar, R.J., Physica B; Condensed Matter (accepted for publication).Google Scholar
6. Begems, M., J. Crystal Growth, 13/14, 360 (1972).Google Scholar
7. Molnar, R.J., Lei, T., and Moustakas, T.D., Appl. Phys. Lett., 62 (Jan. 1993).Google Scholar