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High Quality GaAs on Si by Selective Area Epitaxy

Published online by Cambridge University Press:  28 February 2011

N.H. Karam ,
V. Haven ,
S.M. Vernon ,
N. El-Masry ,
M. Lingunis  and
N. Haegel
N.H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
V. Haven
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
S.M. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
N. El-Masry
Affiliation:
North Carolina State University, Raleigh, NC
M. Lingunis
Affiliation:
University of California, Los Angeles, CA
N. Haegel
Affiliation:
University of California, Los Angeles, CA
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Abstract

Selective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si wafers. SE was found to eliminate wafer warpage, reduce film cracking and reduce the tensile stresses for islands less than 200 µm/side. Complete stress relief has been achieved in 10 µm/side islands after oxide removal. Defect reduction techniques have been employed resulting in two orders of magnitude reduction in the dislocation density and excellent surface morphologies. This paper addresses the potential of SE, by the above techniques in improving the quality of the GaAs on Si films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 39
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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