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High quality GdSil.7 layers formed by high dose channeled implantation

Published online by Cambridge University Press:  15 February 2011

M. F. Wu ,
A. Vantomme ,
H. Pattyn ,
G. Langouche  and
H. Bender
M. F. Wu
Affiliation:
Department of Technical Physics, Peking University, Beijing, People's Republic of China Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
A. Vantomme
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Thin gadolinium silicide layers have been formed by channeled ion beam synthesis. Continuous and heteroepitaxial GdSil.7 layers with a hexagonal structure and a χmin value of 10% are prepared by Gd ion implantation at 90 keV to a dose of 1.3x1017/cm2 at 450°C in Si(111) using channeled implantation. The hexagonal phase of GdSi1.7 is stable up to a temperature of 850°C. Both the crystalline quality and the phase stability are much better than the results obtained by conventional techniques. Annealing at > 900°C suddenly changes the χmin value of the silicide layer from 10% to 100%. X-ray diffraction shows that the phase has changed to orthorhombic. RBS/channeling, x-ray diffraction and transmission electron microscopy are used in this study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 535
Copyright
Copyright © Materials Research Society 1996

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