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Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

Published online by Cambridge University Press:  11 February 2011

Mitsuo Okamoto ,
Ryoji Kosugi ,
Shinichi Nakashima ,
Kenji Fukuda  and
Kazuo Arai
Mitsuo Okamoto
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Ryoji Kosugi
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Shinichi Nakashima
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan R&D Association for Future Electron Devices, Advanced Power Device laboratory, Tokyo, Japan
Kenji Fukuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
Kazuo Arai
Affiliation:
National Institute of Advanced Industrial Science and Technology, Power Electronics Research, Center, Tsukuba Central 2, Umezono 1–1–1, Tsukuba, Ibaraki 305–8568, Japan Ultra-Low-Loss Power Device Technology Research Body, Ibaraki, Japan
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Abstract

Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K5.6
Copyright
Copyright © Materials Research Society 2003

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References

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