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Hybridization Effect On Electron Transport Properties Of Rhombic Triacontahedral-Type Al60-xMg40Xx. (X = Zn, Cu, Ag, and Pd) 1/1-Cubic Approximants

Published online by Cambridge University Press:  10 February 2011

T. Mizuno ,
T. Takeuchi  and
U. Mizutani
T. Mizuno
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Nagoya 464–8603, JAPAN, mizutani@nuap.nagoya-u.ac.jp
T. Takeuchi
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Nagoya 464–8603, JAPAN, mizutani@nuap.nagoya-u.ac.jp
U. Mizutani
Affiliation:
Department of Crystalline Materials Science, Nagoya University, Nagoya 464–8603, JAPAN, mizutani@nuap.nagoya-u.ac.jp
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Abstract

We have measured in this experiment the XPS (x-ray photoemission spectroscopy) and SXES (soft x-ray emission spectroscopy) valence spectra, the electrical resistivity, the Hall coefficient and the Rietveld structural analysis for a series of the RT-type (Rhombic Triacontahedron) Al60-xMg40Xx (X = Zn, Cu, Ag and Pd; x = 5 - 40) 1/1-approximants. The electrical resistivity at 300 K is successfully analyzed in terms of the carrier concentration per atom e/a and the ratio of the lattice constant over the “ideal” lattice constant defined as LCR. The latter is chosen as a quantitative measure of the degree of the hybridization between Al and transition metal elements Cu, Ag and Pd. We show that a sharp resistivity increase with increasing the concentration of the transition metal element can be attributed to the deepening of the pseudogap at the Fermi level, which is brought about by the combination of the Fermi surface-Brillouin zone interaction and the growth of the hybridization effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 553: Symposium LL – Quasicrystals , 1998 , 359
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Poon, S. J., Adv.Phys. 41, p. 303 (1993).Google Scholar
2. Takeuchi, T. and Mizutani, U., Phys.Rev. B52, p. 9,300 (1995).Google Scholar
3. Belin-Ferré, E, Dankhazi, Z., Sadoc, A., Berger, C., Muller, H., and Kirchmayr, H., J.Phys.:Condens Matter 8, p. 3,513 (1996).Google Scholar
4. Fujiwara, T., Phys.Rev. B 40, p. 942 (1989).Google Scholar
5. Takeuchi, T., Mizutani, U., Yamaguchi, S., Fukunaga, T., and Mizuno, T. and Tanaka, N., Phys.Rev. B58, p. 11,345 (1998).Google Scholar
6. Takeuchi, T., Yamada, Y., Fukunaga, T., and Mizutani, U., Mat.Sci.Eng. A181/A182, p. 828 (1994).Google Scholar
7. Takeuchi, T., Murasaki, S., Matsumuro, A., and Mizutani, U., Journal of Non-;Crystalline Solids, 156–158, p. 914–917 (1993).Google Scholar
8. Mizutani, U., Iwakami, W., and Fujiwara, T. in Electronic Properties, edited by Takeuchi, S. and Fujiwara, T. (Proc.of 6th Int.Conf. on Quasicrystals, Tokyo, 1997), p. 579–582.Google Scholar