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Hydrogen Bonding in Low-Gap A-Si,Ge:H,F Superlattices

Published online by Cambridge University Press:  25 February 2011

J. P. Conde ,
G. Hager  and
S. Wagner
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
G. Hager
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The integrated absorption of the Si-H, Ge-H and Si-H2 IR stretching modes were measured for three series of superlattices where: a) the well to barrier thickness ratio was kept constant while the period was varied; b) the barrier thickness was kept constant while the well thickness was varied and c) the well thickness was kept constant while the barrier thickness was varied. The dark (σd) and photo (σph) conductivities, the photoconductivity exponent γ and the activation energy of the dark conductivity Ea were measured perpendicularly to the plane of the layers for series a) and b). Structural changes induced by sandwiching were documented by IR absorption and correlated with the optoelectronic properties of the thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 271
Copyright
Copyright © Materials Research Society 1988

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References

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