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Hydrogen Dilution effects on Amorphous Hydrogenated Silicon (a-Si:H) Prepared by Glow Discharge Near Room Temperature

Published online by Cambridge University Press:  21 February 2011

Man Ken Cheung  and
Mark A. Petrich
Man Ken Cheung
Affiliation:
Department of Chemical Engineering, The Robert R. McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208–3120, USA
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, The Robert R. McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208–3120, USA
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Abstract

We report here the first phase of our attempt to deposit “device-quality” a-Si:H films by glow discharge near room temperature (50 °C). We have found that, at a low rf power density (40 mW/cm2) and high hydrogen/silane ratios (≥ 2), film quality is not uniquely determined by the substrate temperature, Ts. The microstructure of our low hydrogen content films as revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies is similar to that of “device-quality” films deposited at standard Ts. The next phase of our work is to ascertain whether or not similar IR and NMR characteristics between our low Ts films and the standard Ts films imply also similar opto-electronic properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 721
Copyright
Copyright © Materials Research Society 1991

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References

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