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Hydrogen in Compound Semiconductors

Published online by Cambridge University Press:  03 September 2012

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Phenomena associated with hydrogen in compound semiconductors include the formation of complexes with both dopant impurities and deep-level defects, the generation of hydrogen-related deep-level defects, and the migration of isolated hydrogen as a charged species. In addition to reviewing these phenomena, this paper describes the depletion-layer technique for determining thermal dissociation energies of hydrogen-impurity complexes and presents an updated tabulation of the parameters that have thus far been obtained from experimental studies to quantitatively describe hydrogen-dopant complexes and hydrogen migration in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 369
Copyright
Copyright © Materials Research Society 1992

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