Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-29T20:43:19.682Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Induced Defects at Silicon Surfaces and Buried Epitaxial Misfit Dislocation Interfaces

Published online by Cambridge University Press:  25 February 2011

Tian-Qun Zhou ,
Zbigniew Radzimski ,
Zhigang Xiao ,
Bhushan Sopori  and
George A. Rozgonyi
Tian-Qun Zhou
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Zbigniew Radzimski
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Zhigang Xiao
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Bhushan Sopori
Affiliation:
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, CO 80401
George A. Rozgonyi
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Get access

Abstract

A silicon epitaxial structure containing spatially confined arrays of misfit dislocations has been used in order to investigate the interaction between hydrogen and individual extended defects. Hydrogen was introduced using a Kaufman plasma ion beam source. A characteristic Si-H peak at 2100 cm-1 was obtained using multiple internal reflection infrared spectrophotometry. Microdefects such as gas bubbles and {111} planar defects were found near the surface, as well as at the misfit dislocation interfaces, using transmission electron microscopy. A heavily damaged region was obtained on the top Si surface and an extended area SEM/EBIC contrast was obtained due to a surface electrical field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 449
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Johnson, N. M. and Moyer, M. D., Appl. Phys. Lett. 46, 787 (1985); 48, 709 (1986); R. Singh and S. Fonash, 49, 800 (1986); M. Stutzman, 52, 1667 (1988)Google Scholar
2 Hanoka, J. et al. Appl. Phys. Lett. 42, 618 (1983); A. Rohatgi et al., 59, 4167 (1986)Google Scholar
3 Hanoka, J., Hydrogen in Disordered and Amorphous Solid, edited by Bambakidis, G., (1986) pp.81 Google Scholar
4 Muller, J. et al. , Rev. Phys. Appl. 22, 649 (1987)Google Scholar
5 Ponce, F. A. et al. , Inst. Phys. Conf. Ser. 87, 49 (1987)Google Scholar
6 Jeng, S.J., Oehrleih, G. and Scilla, G., Appl. Phys. Lett. 53, 1735 (1988)Google Scholar
7 Rozgonyi, G. A. et al. , J. Cryst. Growth, 85, 300 (1987)Google Scholar
8 Salih, A. et al. Appl. Phys. Lett. 46, 419 (1985); D.M. Lee, J. Posthill and G. Rozgonyi, 53, 370 (1988)Google Scholar
9 Bean, Kenneth, IEEE Trans, on Electron Devices, ED–25, 70 (1978)Google Scholar
10 Olsen, J. and Shimura, F., Appl.Phys. Lett. 53, 1934 (1988)Google Scholar