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Hydrogen Termination of the NH4F-Treated Si(111) Surface Studied by Photoemission and Surface Infrared Spectroscopy

Published online by Cambridge University Press:  21 February 2011

Michio Niwano ,
Kazunari Kurita  and
Nobuo Miyamoto
Michio Niwano
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan
Kazunari Kurita
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan
Nobuo Miyamoto
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan
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Abstract

The Si(111) surface treated in NH4F has been investigated using photoemission and surface infrared spectroscopy (SIS). We confirm both with photoemission and SIS measurements that the NH4F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. Photoemission and SIS data also demonstrate that ammonium fluorides react with the Si substrate to generate the hexafluorosilicate salt, (NH4)2SiF6. We propose that the formation of (NH4)2SiF6 or SiF62− ions plays an important role in the NH4F etching of Si crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 505
Copyright
Copyright © Materials Research Society 1993

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References

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