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Hydrogenation Mechanism of Top-Gated Polysilicon Thin Film Transistors
Published online by Cambridge University Press: 15 February 2011
Abstract
Hydrogen diffusion paths in top-gated polysilicon thin-film transistors have been investigated by measuring the current-voltage characteristics of the transistors with various sizes after hydrogenation. Hydrogenation has been performed in ECR plasma sysytem. It is noted that hydrogen is introduced through three main paths instead of one predominant path. The hydrogen from different paths affects the device parameters differently.
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- Copyright © Materials Research Society 1994
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