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The Ideality of Spatially Inhomogeneous Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

Uwe Rau ,
Herbert H. Güttler  and
Jürgen H. Werner
Uwe Rau
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Herbert H. Güttler
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
Jürgen H. Werner
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, Germany
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Abstract

We present a new analytical theory of electronic transport for inhomogeneous Schottky contacts. Our model combines a novel method to solve Poisson's equation for the space charge region of an inhomogeneous contact with thermionic emission theory. We explain quantitatively the temperature and voltage dependences of the ideality factor n of current/voltage characteristics, and we are able to extract from experimental data information on the characteristic size of the inhomogeneities. Our measurements on polycrystalline and epitaxial Schottky contacts yield values in the range of 200–500nm as the typical size of inhomogeneities, covering a fraction of 0.1–1% of the total interface area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 245
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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