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Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

Published online by Cambridge University Press:  15 February 2011

K. Saarinen ,
T. Laine ,
K. Skog ,
J. Oila ,
P. Hautojärvi ,
K. Rakennus ,
P. Uusimaa ,
A. Salokatve  and
M. Pessa
K. Saarinen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
T. Laine
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
K. Skog
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
J. Oila
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
P. Hautojärvi
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
K. Rakennus
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
P. Uusimaa
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
A. Salokatve
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
M. Pessa
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
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Abstract

We show how positron annihilation can distinguish vacancies in the different sublattices of a compound semiconductor by performing experiments in ZnSxSe1−x and Mgy Zn1−ySxSe1−x layers. We identify the Se vacancies (Vse) in N-doped and the Zn vacancies (Vzn) in Cl-doped material by the shape of the core electron momentum distribution. The charge of the defect involving VSe is neutral or negative in the p-type alloys, suggesting that the Se vacancy is complexed with an acceptor. The concentration of the VSe complexes is high (≥ 1018 cm−3 ), indicating that their role is important in the electrical compensation of p-type ZnSxSe1−x and MgyZn1−y SxSe1−x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 567
Copyright
Copyright © Materials Research Society 1997

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References

[1] Laks, D. B., Walle, C. G. Van de, Neumark, G. F., and Pantelides, S. T., Phys. Rev. Lett. 66, 648 (1991); D. B. Laks, C. G. Van de Walle, G. F. Neumark, P. E. Blöchl, and S. T. Pantelides, Phys. Rev. B 45, 10965 (1992).Google Scholar
[2] Garcia, A. and Northrup, J. E., Phys. Rev. Lett. 74, 1131 (1995).Google Scholar
[3] Walle, C. G. Van de, Laks, D. B., Neumark, G. F., and Pantelides, S. T., Phys. Rev. B 47, 9425 (1993).Google Scholar
[4] Chadi, D. J. and Chang, K. J., Appl. Phys. Lett. 55, 575 (1989); D. J. Chadi, Appl. Phys. Lett. 59, 3589 (1991).Google Scholar
[5] Kwak, K. W., King-Smith, R. D., and Vanderbilt, D., Phys. Rev. B 48, 17827 (1993).Google Scholar
[6] Chadi, D. J., Phys. Rev. Lett. 72, 534 (1994).Google Scholar
[7] Park, C. H. and Chadi, D. J., Phys. Rev. Lett. 75, 1134 (1995).Google Scholar
[8] Saarinen, K., Laine, T., Skog, K., Mäkinen, J., Hautojärvi, P., Rakennus, K., Uusimaa, P., Salokatve, A., and Pessa, M., Phys. Rev. Lett. 77, 3407 (1996).Google Scholar
[9] Hautojärvi, P. and Corbel, C., in Positron Spectroscopy of Solids, edited by Dupasquier, A. and Mills, A. P. Jr. (lOS Press, Amsterdam, 1995).Google Scholar
[10] Alatalo, M., Kauppinen, H., Saarinen, K., Puska, M. J., Mäkinen, J., Hautojärvi, P., and Nieminen, R. M., Phys. Rev. B 51, 4176 (1995); M. Hakala, M. Puska, B. Barbiellini, and R. M. Nieminen, private communication.Google Scholar
[11] Corbel, C., Pierre, F., Saarinen, K., Hautojärvi, P., and Moser, P., Phys. Rev. B 45, 3386 (1992).Google Scholar
[12] Liszkay, L., Corbel, C., Baroux, L., Hautojärvi, P., Bayhan, M., Brinkman, A. W., and Tatarenko, S., Appl. Phys. Lett. 64, 1380 (1994).Google Scholar
[13] Ambigapathy, R., Manuel, A. A., Hautojärvi, P., Saarinen, K., and Corbel, C., Phys. Rev. B 50, 2188 (1994).Google Scholar
[14] Mäkinen, J., Hautojärvi, P., and Corbel, C., J. Phys. Condens. Matter 4, 5137 (1992).Google Scholar
[15] Saarinen, K., Seitsonen, A. P., Hautojärvi, P., and Corbel, C., Phys. Rev. B 52, 10932 (1995).Google Scholar