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Identification of Transition Metals in GaN

Published online by Cambridge University Press:  21 February 2011

K. Pressel ,
R. Heitz ,
L. Eckey ,
I. Loa ,
P. Thurian ,
A. Hoffmann ,
B.K. Meyer ,
S. Fischer ,
C. Wetzel  and
E.E. Haller
K. Pressel
Affiliation:
Institut für Halbleiterphysik, P.O. Box 409, 15204 Frankfurt(Oder), Germany
R. Heitz
Affiliation:
Inst. für Festkörperphysik, Techn. Univ. Berlin, 10623 Berlin, Germany
L. Eckey
Affiliation:
Inst. für Festkörperphysik, Techn. Univ. Berlin, 10623 Berlin, Germany
I. Loa
Affiliation:
Inst. für Festkörperphysik, Techn. Univ. Berlin, 10623 Berlin, Germany
P. Thurian
Affiliation:
Inst. für Festkörperphysik, Techn. Univ. Berlin, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Inst. für Festkörperphysik, Techn. Univ. Berlin, 10623 Berlin, Germany
B.K. Meyer
Affiliation:
Physik-Department E16, Techn. Univ. München, 85748 Garching, Germany
S. Fischer
Affiliation:
Lawrence Berkley Laboratory, Univ. of California, Berkley, CA 94720, U.S.A.
C. Wetzel
Affiliation:
Lawrence Berkley Laboratory, Univ. of California, Berkley, CA 94720, U.S.A.
E.E. Haller
Affiliation:
Lawrence Berkley Laboratory, Univ. of California, Berkley, CA 94720, U.S.A.
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Abstract

We present a photoluminescence study of residual transition metal contaminants in hexagonal GaN layers. We observe three no-phonon lines peaking at 1.3 eV, 1.19 eV and 1.047 eV. The no-phonon line at 1.3 eV is caused by the internal electronic transition 4T 1→ 6A1 of Fe3+. The 1.19 eV emission, which was first attributed to Cr4+, is caused by Ti2+. GaN layers intentionally doped with Cr, V, or Ti during growth have been investigated. Only the Ti doped samples snow an intense sienal of the 1.19 eV emission. The experimental data of the luminescence center at 1.047 ev, which appears as natural contaminant only in GaN layers grown by the sandwich technique, fit best to the 4T2(F) → 4A2(F) transition of Co2+. The three no-phonon lines show characteristic phonon sidebands. Most of them correspond to phonon modes observed in Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 491
Copyright
Copyright © Materials Research Society 1996

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References

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