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Imaging VLSI Cross Sections by Atomic Force Microscopy

Published online by Cambridge University Press:  15 February 2011

Gabi Neubauer ,
M. Lawrence ,
A. Dass  and
Thad J. Johnson
Gabi Neubauer
Affiliation:
Intel Corporation. 2200 Mission College Blvd.. P.O. Box 58119. SC2-24, Santa Clara, CA 95052-8119
M. Lawrence
Affiliation:
Intel Corporation. 2200 Mission College Blvd.. P.O. Box 58119. SC2-24, Santa Clara, CA 95052-8119
A. Dass
Affiliation:
Intel Corporation. 2200 Mission College Blvd.. P.O. Box 58119. SC2-24, Santa Clara, CA 95052-8119
Thad J. Johnson
Affiliation:
Department of Materials Science and Engineering at Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
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Abstract

Imaging is an integral part of VLSI technology development and quality control in device manufacturing. We report a novel application of Atomic Force Microscopy to image VLSI cross sections of metallographically polished samples. The major advantage of this technique over conventional imaging techniques, such as Scanning or Transmission Electron Microscopy, is the higher resolution achievable in combination with higher throughput and an easy access to quantitative data, such as line widths or re-entrant angles. We observe a very good correlation of AFM VLSI cross section images, acquired in air, with those acquired by SEM and TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 283
Copyright
Copyright © Materials Research Society 1992

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References

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