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Impact of planarization sheet addition on full wafer printing uniformity

Published online by Cambridge University Press:  01 February 2011

Tanguy Leveder ,
Stefan Landis ,
Laurent Davoust  and
Nicolas Chaix
Tanguy Leveder
Affiliation:
tanguy.leveder@cea.fr, CEA\LETI - Minatec, D2NT, 17, rue des martyrs, Grenoble, France, 33 4 38 78 26 29
Stefan Landis
Affiliation:
stefan.landis@cea.fr, CEA\LETI - Minatec, 17, rue des martyrs, Grenoble, N/A, France
Laurent Davoust
Affiliation:
laurent;davoust@hmg.inpg.fr, ENSHMG-LEGI, Grenoble, N/A, France
Nicolas Chaix
Affiliation:
nicolas.chaix@cea.fr, CNRS\LTM, 17, rue des martyrs, Grenoble, N/A, France
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Abstract

Uniformity of nanoimprint lithography has been quantitatively studied through the ability to replicate regular lines arrays by wafer-to-wafer imprint. Two statistic coefficients have been defined in order to quantify the local uniformity and the ability to identically imprint two similar areas respectively. Those coefficients enable to compare different imprint profiles in terms of uniformity and to point out the efficiency of soft layers insertion into the imprint stack.

Keywords

lithography (deposition)nanoscalepolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 961: Symposium O – Nanostructured and Patterned Materials for Information Storage , 2006 , 0961-O02-06
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Chou, S.Y., Krauss, P.R., Renstrom, P.J., Appl. Phys. Lett. 67, 3114(1995).Google Scholar
2. Jung, G.Y., Johnston-Halperin, E., Wu, W., Yu, Z., Wang, S.-Y., Tong, W. M., Li, Z., Green, J. E., Sheriff, B. A., Boukai, A., Heath, J. R., Williams, R. S., Nano Lett. 4, 533(2004).Google Scholar
3. Guo, L. Jay, J. Phys. D 37, R123 (2004).Google Scholar
4. Bogdanski, N., Wissen, M., Scheer, H.-C., Proc. SPIE 5835, 282 (2005).Google Scholar
5. Fuard, D., Perret, C., Gourgon, C., Schiavone, P., J. Vac. Sci. Technol. B 23, 3069 (2005).Google Scholar
6. Mancini, D. P., Gehoski, K. A., Dauksher, W. J., Nordquist, K. J., Resnick, D. J., Schumaker, P., Ian McMackin, presented at SPIE Microlithography Conference, 2003.Google Scholar
7. Abdo, A., Schuetter, S., Nellis, G., Wei, A., Engelstad, R., Truskett, V., J. Vac. Sci. Technol. B 22, 3279 (2004).Google Scholar
8. Gourgon, C., Perret, C., Micouin, G., Lazzarino, F., Tortai, J.-H., O. Joubert J. Vac. Sci. Technol. B 21, 98(2003).Google Scholar