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Impurity State-Dangling Bond Pairs in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

L. H. Yang ,
C. Y. Fong  and
C. S. Nichols
L. H. Yang
Affiliation:
Department of Physics, University of California, Davis, CA 95616
C. Y. Fong
Affiliation:
Department of Physics, University of California, Davis, CA 95616
C. S. Nichols
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We use the self-consistent pseudopotential method with a supercell model of a-Si:H to study the electronic structures of substitutional fourfold- coordinated P and fourfold-coordinated B at the second neighbor of a dangling bond. Partial transfer of charge from the impurity state to the dangling bond state is examined. The influence of passivating the dangling bond by a single H atom on the impurity state is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 513
Copyright
Copyright © Materials Research Society 1988

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