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In Situ IR Absorption Study of H Bonding in a-Si:H Thin Films

Published online by Cambridge University Press:  21 February 2011

M. Katiyar ,
G. F. Feng ,
J. R. Abelson  and
N. Maley
M. Katiyar
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
G. F. Feng
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
N. Maley
Affiliation:
Coordinated Science Laboratory and Department of Materials Science and Engineering, University of Illinois, 1101 W. Springfield Ave., Urbana, IL 61801.
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Abstract

We have used real time, in situ infrared reflectance spectroscopy to study the evolution of Si-H bonding during the growth of hydrogenated amorphous silicon (a-Si:H) by dc magnetron reactive sputtering. The surface Si-H stretching mode (2100 cm-l) is observed in films 5 Å thick and the 2000 cm-l mode, which has been attributed to isolated monohydrides in the bulk, appears for thickness (d) < 10–15 Å For larger thicknesses the intensity of both modes increases approximately linearly. These trends are interpreted in terms of the nucleation and coalescence of islands for d> 15 Å followed by bulk-like growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 295
Copyright
Copyright © Materials Research Society 1991

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References

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