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In Situ Monitoring of MOCVD of Aluminum Nitride by Optical Spectroscopies

Published online by Cambridge University Press:  10 February 2011

S.C. Allen  and
H.H. Richardson
S.C. Allen
Affiliation:
Department of Chemistry and Biochemistry, Ohio University, Athens, OH 45701, richards@helios.phy.ohiou.edu
H.H. Richardson
Affiliation:
Department of Chemistry and Biochemistry, Ohio University, Athens, OH 45701, richards@helios.phy.ohiou.edu
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Abstract

Trimethylaluminum and ammonia were used as precursors in the high temperature (900°C) deposition of AIN on silicon at vacuum pressure. The emitted radiation was collected in situ by a FTIR spectrometer. Film thickness was monitored in situ by interference oscillations in a red diode laser beam reflected off the sample. The thickness measurements were correlated with IR emission spectra from the emerging AIN film, and a principal component analysis (PCA) and principal component regression (PCR) were performed on the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 301
Copyright
Copyright © Materials Research Society 2000

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References

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