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In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique

Published online by Cambridge University Press:  15 February 2011

Orlando Auciello
Affiliation:
MCNC, Electronics Technology Division, Research Triangle Park, NC 27709-2889
A. R. Krauss
Affiliation:
Argonne National Laboratory, Materials Science and Chemistry Divisions, Argonne, IL 60439
Y. Lin
Affiliation:
Argonne National Laboratory, Materials Science and Chemistry Divisions, Argonne, IL 60439
R. P. H. Chang
Affiliation:
Northwestern University, Department of Materials Science, Evanston, IL 60208
D. M. Gruen
Affiliation:
Argonne National Laboratory, Materials Science and Chemistry Divisions, Argonne, IL 60439
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Abstract

A new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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