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In Situ Synthesis of Single-Phase Skutterudite Thin Films (CoSb3 and IrSb3) by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

J.C. Caylor ,
A.M. Stacy ,
P. Bandaru ,
T. Sands  and
R. Gronsky
J.C. Caylor
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
A.M. Stacy
Affiliation:
Department of Chemistry, University of California, Berkeley, CA 94720
P. Bandaru
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
T. Sands
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
R. Gronsky
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
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Abstract

Recent advances in doping and substitutional alloying of bulk skutterudite phases based on the CoAs3 structure have yielded compositions with high thermoelectric figures-of-merit (“ZT”). It is postulated that further enhancements in ZT may be attained in artificially-structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. This work describes the growth of single-phase skutterudite thin films (CoSb3 and IrSb3) by pulsed laser deposition. A substrate temperature of 250°C has been found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature, the film is depleted of antimony due to its high vapor pressure. However, when films are grown from antimony-rich targets, the substrate temperature can be increased to at least 350°C without losing the skutterudite phase. Films from both target types were characterized with X-ray diffraction and Rutherford-Back-Scattering (RBS) to reveal structure and stoichiometry. Some preliminary electrical measurements will also be shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 399
Copyright
Copyright © Materials Research Society 1998

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References

1. Nolas, G.S., Slack, G.A., Morelli, D.T., Tritt, T.M., Ehrlich, A.C., J. Appl. Phys. 79 (8), 4002 (1996).Google Scholar
2. Goldsmid, H.J., Thermoelectric Refrigeration, Plenum Press, 1964.Google Scholar
3. Chen, G., ASME DSC-Vol. 59, 13 (1996).Google Scholar
4. Hicks, L.D., Dresselhaus, M.S., Phys. Rev. B, 47, 12727 (1993).Google Scholar
5. Anno, H., Matsubara, K., Notohara, Y., Sakakibara, T., Kishimoto, K., and Koyanagi, T., Proc. XV Int. Conf. on Thermoelectrics, Pasadena, CA, March 26-29, 1996.Google Scholar
6. Christen, H-M., Mandrus, D.G., Norton, D.P., Boatner, L.A., Sales, B.C., presented at the 1997 MRS Spring Meeting, San Francisco, CA, 1997 (proceedings publication unknown).Google Scholar
7. Chen, B., Xu, J-H., Hu, S., Uher, C., Mat. Res. Soc. Symp. Proc. Vol. 452, 1037 (1997).Google Scholar