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InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Qianghua Xie ,
N. P. Kobayashi ,
T. R. Ramachandran ,
A. Kalburge ,
P. Chen  and
A. Madhukar
Qianghua Xie
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
N. P. Kobayashi
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
T. R. Ramachandran
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
A. Kalburge
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
P. Chen
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, CA 90089-0241
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Abstract

In-situ, ultra high vacuum combined scanning tunneling microscope/atomic force microscope (STM/AFM) studies were undertaken to examine the initiation of 3D InAs islands on GaAs (100) and their density and size distribution as a function of growth conditions. A decreasing island density with increasing As4 pressure is observed and points to the significance of strain in affecting In migration and As4 incorporation. A stack of InAs islands separated by GaAs spacer layers exhibit a vertically self-organized growth. Through analysis of a phenomenological model, this is shown to be a consequence of a directional In adatom migration caused by the islandinduced nonuniform strain fields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 177
Copyright
Copyright © Materials Research Society 1995

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References

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