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Indium Tin Oxide Conductive Nanowires Formed by Magnetron Sputtering

Published online by Cambridge University Press:  08 April 2015

Naoki Yamamoto  and
Kirihiko Morisawa
Naoki Yamamoto
Affiliation:
Kochi University of Technology, Tosayamada-cho, Kami-shi, Kochi 782-8502, Japan.
Kirihiko Morisawa
Affiliation:
Kochi University of Technology, Tosayamada-cho, Kami-shi, Kochi 782-8502, Japan.
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Abstract

Indium tin oxide (ITO) nanowires (NWs) were grown on glass substrates by using ITO sputtering sources (targets) with SnO2 contents in the range of approximately 5.0 to 30.0 wt%. NW growth became apparent at temperatures above 125 °C, and the In, Sn and O contents of the resulting ITO NWs were similar to those of the ITO source. NWs grown from ITO sources containing 5.0 to 12.0 wt% SnO2 had circular or elliptical cross-sections, while those obtained from sources with 12.0 to 30.0 wt% SnO2 exhibited square cross-sections. ITO NWs approximately 2 μm in length were obtained as single crystals with a cubic crystal structure. The resistivity of an ITO NW was measured using four nanoprobes in conjunction with a field emission scanning electron microscope and was found to range from 0.13 to 0.6 μΩ-m, values that were approximately one order of magnitude lower than those of transparent ITO films.

Keywords

nanostructuresputteringoxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1747: Symposium HH – Flame and High-Temperature Synthesis of Functional Nanomaterials—Fundamentals and Applications , 2015 , mrsf14-1747-hh05-02
Copyright
Copyright © Materials Research Society 2015 

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References

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