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Influence of Atomic Hydrogen on Nickel Silicide Formation

Published online by Cambridge University Press:  17 March 2011

A. Vengurlekar ,
Satheesh Balasubramanian ,
S. Ashok ,
N. D. Theodore  and
D.Z. Chi
A. Vengurlekar
Affiliation:
Department of Engineering Science & Mechanics, Pennsylvania State University, University Park, Pennsylvania, PA 16802, U.S.A.
Satheesh Balasubramanian
Affiliation:
Department of Engineering Science & Mechanics, Pennsylvania State University, University Park, Pennsylvania, PA 16802, U.S.A.
S. Ashok
Affiliation:
Department of Engineering Science & Mechanics, Pennsylvania State University, University Park, Pennsylvania, PA 16802, U.S.A.
N. D. Theodore
Affiliation:
Motorola Inc., Advanced Products R&D Labs, Tempe, AZ 85284, U.S.A.
D.Z. Chi
Affiliation:
Institute of Materials Research and Engineering, 117602, Singapore
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Abstract

Nickel monosilicide (NiSi) is a leading contender to replace the currently used class of silicides for contacts to the source, drain and gate regions in Complimentary Metal-Oxide- Semiconductor (CMOS) circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film shows a significant decrease under hydrogenation of the Si substrate prior to Ni evaporation/anneal for projected silicidation temperatures below 600°C. Correspondingly, the Si region near the interface is decorated with defects. At higher silicidation temperatures, the sheet resistance rises along with greater in-diffusion of Ni into the hydrogenated Si samples. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy and Hall effect measurements are used to characterize the samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.6
Copyright
Copyright © Materials Research Society 2004

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References

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