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The Influence of Ion Beam Implantation on Electrical Properties of Polycrystalline MnNiCuFeO

Published online by Cambridge University Press:  25 February 2011

Li Binbin ,
Tan Hui ,
Han Ying ,
Tao Wei  and
Lin Chenglu
Li Binbin
Affiliation:
Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011, P. R. China
Tan Hui
Affiliation:
Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011, P. R. China
Han Ying
Affiliation:
Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011, P. R. China
Tao Wei
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, P. R. China
Lin Chenglu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, P. R. China
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Abstract

Polycrystalline MnNiCuFeO was implanted by B+, P+ and Si+ ion beams and thermally annealed. The structure and electrical properties of the sample were measured using SEM, Microprobe (MP), Low Frequency Impedance Analyzer (LFIA) and Spreading Resistance Probe (SRP). The results show that the resistance of grain boundaries is much higher than that of grains. The spreading resistance of the implanted samples is lower by factor of 2 than that of the unimplanted ones. The ratio of the real part Rs (grain effect) to imaginary part Xs (grain boundary effect) decreases with ion beam implantation. From these results, we came to the conclusion that the behavior of the grain boundaries is important to the bulk properties of polycrystalline MnNiCuFeO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 407
Copyright
Copyright © Materials Research Society 1993

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References

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