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Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride

Published online by Cambridge University Press:  01 February 2011

Suk Ing Liem  and
Roger J. Reeves
Suk Ing Liem
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics and Astronomy, University of Canterbury, Christchurch, New Zealand
Roger J. Reeves
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics and Astronomy, University of Canterbury, Christchurch, New Zealand
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Abstract

Reactive Ion Etching (RIE) induces defects in semiconductor materials. These defects can serve as local non-radiative recombination centres for electron-hole pairs, affecting the radiative lifetimes and luminescence efficiencies of the semiconductors. Argon (Ar) and sulphur hexafluoride (SF6) gases were used as etching gases to investigate the influence of ion energy on the RIE induced optical damage of Gallium Nitride (GaN). The significant result of etching by Ar and SF6 gases was that these etching induce defects, but as the total PL does not greatly change, it appears that this process is not increasing the density of nonradiative centres.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.46
Copyright
Copyright © Materials Research Society 2003

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