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Influence of Mechanical Stress on The Electrical Performance of Polycrystalline-Silicon Resistors

Published online by Cambridge University Press:  17 March 2011

M. Nakabayashi ,
H. Ohyama ,
E. Simoen ,
M. Ikegami ,
C. Claeys ,
K. Kobayashi ,
M. Yoneoka ,
Y. Takami ,
H. Sunaga  and
H. Takizawa
M. Nakabayashi
Affiliation:
Mitsubishi Electric Co., 997 Miyoshi Nishigoshi Kumamoto, 861-1197, Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Ikegami
Affiliation:
Mitsubishi Electric Co., 997 Miyoshi Nishigoshi Kumamoto, 861-1197, Japan
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Kobayashi
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
M. Yoneoka
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
Y. Takami
Affiliation:
Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-0101, Japan
H. Sunaga
Affiliation:
Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-1292, Japan
H. Takizawa
Affiliation:
Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-1292, Japan
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Abstract

Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films, doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped layers of 250 nm thickness, which were deposited by LPCVD at 620 °C on thermally oxidized silicon wafers. Film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2 × 1014 and 5.3 × 1014 cm−2, respectively. The Poly-Si films were annealed in a H2 ambient at 1000 °C for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers in order to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A29.3
Copyright
Copyright © Materials Research Society 2000

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References

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