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Influence of Metal Contamination on Minority Carrier Diffusion Length and Oxide Charge

Published online by Cambridge University Press:  10 February 2011

J. Sakuma ,
Y. Okui ,
H. Miyazawa ,
F. Inoue  and
M. Miyajima
J. Sakuma
Affiliation:
Fujitsu limited, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki, 211-0053, Japan
Y. Okui
Affiliation:
Fujitsu limited, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki, 211-0053, Japan
H. Miyazawa
Affiliation:
Fujitsu limited, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki, 211-0053, Japan
F. Inoue
Affiliation:
Fujitsu limited, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki, 211-0053, Japan
M. Miyajima
Affiliation:
Fujitsu limited, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki, 211-0053, Japan
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Abstract

Many kinds of ULSI Circuit (DRAM, LOGIC, FRAM [1] etc.) are produced at the same production line to reduce the costs. So we have to control many kinds of metal contamination. We investigated the influence of metal contamination on minority carrier diffusion length and oxide charge. The metal impurities we studied are Fe, Cu, Ni, Cr, Al, Na, Ca, FRAM electrode metals (Pt, Ru), metals included in PZT ferro-electric capacitors (Pb, Zr, Ti) [2], metals added to PZT (La, Nb) [3], and metals used for SBT Ferro-electric capacitors (Sr, Bi, Ta) [4].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 245
Copyright
Copyright © Materials Research Society 1998

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References

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