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Influence of Nitrogen Bonds on electrical properties of HfAlOx(N) films fabricated through LL-D&A process using NH3

Published online by Cambridge University Press:  01 February 2011

Kunihiko Iwamaoto ,
Tomoaki Nishimura ,
Koji Tominaga ,
Tetsuji Yasuda ,
Koji Kimoto ,
Toshihide Nabatame  and
Akira Toriumi
Kunihiko Iwamaoto
Affiliation:
MIRAI project, Association of Super-Advanced Electronic Technologies (ASET), AIST, Tsukuba SCR Building, Tsukuba, 305–8569, Japan
Tomoaki Nishimura
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institution of Advanced Industrial Science and Technology (AIST), Japan
Koji Tominaga
Affiliation:
MIRAI project, Association of Super-Advanced Electronic Technologies (ASET), AIST, Tsukuba SCR Building, Tsukuba, 305–8569, Japan
Tetsuji Yasuda
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institution of Advanced Industrial Science and Technology (AIST), Japan
Koji Kimoto
Affiliation:
Advanced Material Laboratory, National Institution for Materials Science (NIMS), Japan
Toshihide Nabatame
Affiliation:
MIRAI project, Association of Super-Advanced Electronic Technologies (ASET), AIST, Tsukuba SCR Building, Tsukuba, 305–8569, Japan
Akira Toriumi
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institution of Advanced Industrial Science and Technology (AIST), Japan Department of Materials Science, School of Engineering, The University of Tokyo, Japan
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Abstract

We have investigated the influence of nitrogen incorporation into the HfAlOx film prepared by LL-D&A process with NH3 annealing step on structural change and electrical properties. Also, we have evaluated the effects of PDA treatment on electrical properties. Nitrogen concentration in HfAlOx(N) film was enhanced with increasing the NH3 annealing temperature. The shift of Hf 4f average binding energy towards lower side was observed in proportion to nitrogen concentration in HfAlOx(N) film. This result indicates the partial change of the local coordination from O-Hf-O to O-Hf-N. The increase of O-Hf-N component drastically degraded the gate leakage current in HfAlOx(N) film. Nitrogen atoms still maintained in HfAlOx(N) film even after PDA at 850°C in O2 ambient. PDA treatment at higher temperature after D&A(NH3) process improved the flat-band voltage shift and the electron mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E1.6
Copyright
Copyright © Materials Research Society 2004

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References

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