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Initial Growth of Metastable Titanium Disilicide at Amorphous Silicide/Crystalline Silicon Interface

Published online by Cambridge University Press:  25 February 2011

Z. Ma ,
L. H. Allen  and
S. Lee
Z. Ma
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
L. H. Allen
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801.
S. Lee
Affiliation:
NCR Corporation, Colorado Springs, CO 80916.
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Abstract

Initial stage of growth of metastable titanium disilicide (C49-TiSi2) was investigated by annealing Ti/doped polycrystalline Si bilayers deposited on oxidized Si wafers at 530°C and at a constant heating rate of 10°C/min. Morphological evolution of the C49-TiSi2 phase was studied by cross-sectional transmission electron microscopy (XTEM) and local chemistry was probed with a scanning transmission electron microscope (STEM) equipped with a nanoprobe. At the early stage, the C49-TiSi2 phase nucleates discontinuously along the amorphous silicide (a-TiSix )/crystalline Si (c-Si) interface and then exhibits simultaneous lateral growth and vertical growth. The results are interpretated using a model based upon preferential Si diffusion along interphase boundaries to the growth front.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 593
Copyright
Copyright © Materials Research Society 1993

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References

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